Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
19 A
Maximum Drain Source Voltage
200 V
Series
HEXFET
Package Type
DirectFET ISOMETRIC
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
0.1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Number of Elements per Chip
1
Transistor Material
Si
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 267,802
komad (u Reel od 4800) (bez PDV-a)
RSD 321,362
komad (u Reel od 4800) (s PDV-om)
4800
RSD 267,802
komad (u Reel od 4800) (bez PDV-a)
RSD 321,362
komad (u Reel od 4800) (s PDV-om)
4800
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
19 A
Maximum Drain Source Voltage
200 V
Series
HEXFET
Package Type
DirectFET ISOMETRIC
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
0.1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Number of Elements per Chip
1
Transistor Material
Si