P-Channel MOSFET, 10.5 A, 40 V, 8-Pin SOIC Infineon IRF7240TRPBF
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
10.5 A
Maximum Drain Source Voltage
40 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
25 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
73 nC @ 10 V
Width
4mm
Transistor Material
Si
Series
HEXFET
Minimum Operating Temperature
-55 °C
Height
1.5mm
Detalji o proizvodu
P-Channel Power MOSFET 40V to 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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RSD 249,513
komadno (u pakovanju od 10) (bez PDV-a)
RSD 299,416
komadno (u pakovanju od 10) (s PDV-om)
10
RSD 249,513
komadno (u pakovanju od 10) (bez PDV-a)
RSD 299,416
komadno (u pakovanju od 10) (s PDV-om)
10
Kupujte na veliko
| količina | Jedinična cena | Po pakovanje |
|---|---|---|
| 10 - 40 | RSD 249,513 | RSD 2.495 |
| 50 - 90 | RSD 241,675 | RSD 2.417 |
| 100 - 240 | RSD 240,368 | RSD 2.404 |
| 250 - 490 | RSD 239,062 | RSD 2.391 |
| 500+ | RSD 231,224 | RSD 2.312 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
10.5 A
Maximum Drain Source Voltage
40 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
25 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
73 nC @ 10 V
Width
4mm
Transistor Material
Si
Series
HEXFET
Minimum Operating Temperature
-55 °C
Height
1.5mm
Detalji o proizvodu
P-Channel Power MOSFET 40V to 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda