Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
30 V
Series
IRF7805Z
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
8.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.25V
Minimum Gate Threshold Voltage
1.35V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
18 nC @ 4.5 V
Height
1.5mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 80,994
komadno (u pakovanju od 10) (bez PDV-a)
RSD 97,193
komadno (u pakovanju od 10) (s PDV-om)
10
RSD 80,994
komadno (u pakovanju od 10) (bez PDV-a)
RSD 97,193
komadno (u pakovanju od 10) (s PDV-om)
10
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
30 V
Series
IRF7805Z
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
8.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.25V
Minimum Gate Threshold Voltage
1.35V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
18 nC @ 4.5 V
Height
1.5mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V