N-Channel MOSFET, 93 A, 250 V, 3-Pin TO-247AC Infineon IRFP4768PBF
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
93 A
Maximum Drain Source Voltage
250 V
Series
HEXFET
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
14.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
520 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.31mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
15.87mm
Typical Gate Charge @ Vgs
180 nC @ 10 V
Height
20.7mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
Mexico
Detalji o proizvodu
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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RSD 960,167
komad (u Tubi od 25) (bez PDV-a)
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komad (u Tubi od 25) (s PDV-om)
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RSD 960,167
komad (u Tubi od 25) (bez PDV-a)
RSD 1.152,20
komad (u Tubi od 25) (s PDV-om)
25
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
93 A
Maximum Drain Source Voltage
250 V
Series
HEXFET
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
14.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
520 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.31mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
15.87mm
Typical Gate Charge @ Vgs
180 nC @ 10 V
Height
20.7mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
Mexico
Detalji o proizvodu
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda