Infineon StrongIRFET N-Channel MOSFET, 172 A, 60 V, 3-Pin TO-247 IRFP7537PBF

RS kataloški broj:: 820-8864Pbrend: InfineonProizvođački broj:: IRFP7537PBF
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Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

172 A

Maximum Drain Source Voltage

60 V

Series

StrongIRFET

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

230 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

15.87mm

Typical Gate Charge @ Vgs

142 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

5.31mm

Transistor Material

Si

Height

20.7mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

StrongIRFET™ Power MOSFET, Infineon

Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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RSD 4.729

RSD 236,449 komad (isporucivo u Tubi) (bez PDV-a)

RSD 5.675

RSD 283,739 komad (isporucivo u Tubi) (s PDV-om)

Infineon StrongIRFET N-Channel MOSFET, 172 A, 60 V, 3-Pin TO-247 IRFP7537PBF
Odaberite vrstu pakovanja

Proizvodno pakovanje (cev)

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 2.

Proizvodnja -

Dostupno u više komada 2.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u mašine, omogućujući vam da poboljšate učinkovitost proizvodnje.

20

Dostupno u više komada 2
20RSD 4.729
22RSD 5.202
24RSD 5.675
26RSD 6.148
28RSD 6.621
30RSD 7.093
32RSD 7.566
34RSD 8.039
36RSD 8.512
38RSD 8.985
40RSD 9.458
42RSD 9.931
44RSD 10.404
46RSD 10.877
48RSD 11.350

RSD 4.729

RSD 236,449 komad (isporucivo u Tubi) (bez PDV-a)

RSD 5.675

RSD 283,739 komad (isporucivo u Tubi) (s PDV-om)

Infineon StrongIRFET N-Channel MOSFET, 172 A, 60 V, 3-Pin TO-247 IRFP7537PBF
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakovanja

Proizvodno pakovanje (cev)

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 2.

Proizvodnja -

Dostupno u više komada 2.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u mašine, omogućujući vam da poboljšate učinkovitost proizvodnje.

20

Dostupno u više komada 2
20RSD 4.729
22RSD 5.202
24RSD 5.675
26RSD 6.148
28RSD 6.621
30RSD 7.093
32RSD 7.566
34RSD 8.039
36RSD 8.512
38RSD 8.985
40RSD 9.458
42RSD 9.931
44RSD 10.404
46RSD 10.877
48RSD 11.350

Informacije o stanju skladišta trenutno nisu dostupne.

Proverite ponovno kasnije.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

172 A

Maximum Drain Source Voltage

60 V

Series

StrongIRFET

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

230 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

15.87mm

Typical Gate Charge @ Vgs

142 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

5.31mm

Transistor Material

Si

Height

20.7mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

StrongIRFET™ Power MOSFET, Infineon

Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više