P-Channel MOSFET, 5.8 A, 30 V, 6-Pin TSOP-6 Infineon IRFTS9342TRPBF

RS kataloški broj:: 907-5151brend: InfineonProizvođački broj:: IRFTS9342TRPBF
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Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

5.8 A

Maximum Drain Source Voltage

30 V

Package Type

TSOP-6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

66 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3mm

Typical Gate Charge @ Vgs

12 nC @ 10 V

Width

1.75mm

Transistor Material

Si

Series

HEXFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.3mm

Detalji o proizvodu

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Informacije o stanju skladišta trenutno nisu dostupne.

Proverite ponovno kasnije.

Informacije o stanju skladišta trenutno nisu dostupne.

RSD 78,381

komadno (u pakovanju od 50) (bez PDV-a)

RSD 94,057

komadno (u pakovanju od 50) (s PDV-om)

P-Channel MOSFET, 5.8 A, 30 V, 6-Pin TSOP-6 Infineon IRFTS9342TRPBF
Odaberite vrstu pakovanja

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 50.

Proizvodnja -

Dostupno u više komada 50.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u mašine, omogućujući vam da poboljšate učinkovitost proizvodnje.

50

Dostupno u više komada 50
50RSD 3.919
100RSD 7.838
150RSD 11.757
200RSD 15.676
250RSD 11.757
300RSD 14.109
350RSD 16.460
400RSD 18.811
450RSD 21.163
500RSD 22.861
550RSD 25.147
600RSD 27.433
650RSD 29.719
700RSD 32.006
750RSD 34.292

RSD 78,381

komadno (u pakovanju od 50) (bez PDV-a)

RSD 94,057

komadno (u pakovanju od 50) (s PDV-om)

P-Channel MOSFET, 5.8 A, 30 V, 6-Pin TSOP-6 Infineon IRFTS9342TRPBF
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakovanja

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 50.

Proizvodnja -

Dostupno u više komada 50.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u mašine, omogućujući vam da poboljšate učinkovitost proizvodnje.

50

Dostupno u više komada 50
50RSD 3.919
100RSD 7.838
150RSD 11.757
200RSD 15.676
250RSD 11.757
300RSD 14.109
350RSD 16.460
400RSD 18.811
450RSD 21.163
500RSD 22.861
550RSD 25.147
600RSD 27.433
650RSD 29.719
700RSD 32.006
750RSD 34.292

Kupujte na veliko

količinaJedinična cenaPo pakovanje
50 - 200RSD 78,381RSD 3.919
250 - 450RSD 47,029RSD 2.351
500 - 1200RSD 45,722RSD 2.286
1250 - 2450RSD 44,416RSD 2.221
2500+RSD 41,803RSD 2.090

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

5.8 A

Maximum Drain Source Voltage

30 V

Package Type

TSOP-6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

66 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3mm

Typical Gate Charge @ Vgs

12 nC @ 10 V

Width

1.75mm

Transistor Material

Si

Series

HEXFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.3mm

Detalji o proizvodu

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više