Infineon IRG4PH30KPBF IGBT, 20 A 1200 V, 3-Pin TO-247AC, Through Hole
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonMaximum Continuous Collector Current
20 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Package Type
TO-247AC
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.9 x 5.3 x 20.3mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Detalji o proizvodu
Single IGBT up to 20A, Infineon
Optimised IGBTs designed for medium frequency applications with fast response which provide the user with the highest efficiency available. These devices utilise FRED diodes optimised to provide the best performance with IGBTs
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.
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Proverite ponovno kasnije.
RSD 607
Each (bez PDV-a)
RSD 729
Each (s PDV-om)
1
RSD 607
Each (bez PDV-a)
RSD 729
Each (s PDV-om)
1
Kupujte na veliko
| količina | Jedinična cena |
|---|---|
| 1 - 4 | RSD 607 |
| 5 - 9 | RSD 581 |
| 10 - 24 | RSD 549 |
| 25 - 49 | RSD 516 |
| 50+ | RSD 503 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonMaximum Continuous Collector Current
20 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Package Type
TO-247AC
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.9 x 5.3 x 20.3mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Detalji o proizvodu
Single IGBT up to 20A, Infineon
Optimised IGBTs designed for medium frequency applications with fast response which provide the user with the highest efficiency available. These devices utilise FRED diodes optimised to provide the best performance with IGBTs
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda