N-Channel MOSFET, 10 A, 100 V, 3-Pin TO-220AB Infineon IRL520NPBF
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Series
LogicFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
48 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
20 nC @ 5 V
Number of Elements per Chip
1
Height
8.77mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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RSD 142,392
komad (u Tubi od 50) (bez PDV-a)
RSD 170,87
komad (u Tubi od 50) (s PDV-om)
50
RSD 142,392
komad (u Tubi od 50) (bez PDV-a)
RSD 170,87
komad (u Tubi od 50) (s PDV-om)
50
Kupujte na veliko
| količina | Jedinična cena | Po cev |
|---|---|---|
| 50 - 50 | RSD 142,392 | RSD 7.120 |
| 100 - 200 | RSD 121,49 | RSD 6.075 |
| 250 - 450 | RSD 118,878 | RSD 5.944 |
| 500 - 1200 | RSD 113,652 | RSD 5.683 |
| 1250+ | RSD 109,733 | RSD 5.487 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Series
LogicFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
48 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
20 nC @ 5 V
Number of Elements per Chip
1
Height
8.77mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda