P-Channel MOSFET, 4.3 A, 12 V, 3-Pin SOT-23 Infineon IRLML6401TRPBF

RS kataloški broj:: 301-316Pbrend: InfineonProizvođački broj:: IRLML6401TRPBF
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Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

4.3 A

Maximum Drain Source Voltage

12 V

Series

HEXFET

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

50 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.95V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Typical Gate Charge @ Vgs

10 nC @ 5 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.04mm

Width

1.4mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.02mm

Detalji o proizvodu

P-Channel Power MOSFET 12V to 20V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Informacije o stanju skladišta trenutno nisu dostupne.

Proverite ponovno kasnije.

Informacije o stanju skladišta trenutno nisu dostupne.

RSD 80,994

komad (isporučivo u Reel) (bez PDV-a)

RSD 97,193

komad (isporučivo u Reel) (s PDV-om)

P-Channel MOSFET, 4.3 A, 12 V, 3-Pin SOT-23 Infineon IRLML6401TRPBF
Odaberite vrstu pakovanja

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 5.

Proizvodnja -

Dostupno u više komada 5.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u mašine, omogućujući vam da poboljšate učinkovitost proizvodnje.

5

Dostupno u više komada 5
5RSD 405
10RSD 810
15RSD 1.215
20RSD 1.620
25RSD 2.025
30RSD 2.430
35RSD 2.835
40RSD 3.240
45RSD 3.645
50RSD 3.527
55RSD 3.880
60RSD 4.233
65RSD 4.585
70RSD 4.938
75RSD 5.291

RSD 80,994

komad (isporučivo u Reel) (bez PDV-a)

RSD 97,193

komad (isporučivo u Reel) (s PDV-om)

P-Channel MOSFET, 4.3 A, 12 V, 3-Pin SOT-23 Infineon IRLML6401TRPBF
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakovanja

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 5.

Proizvodnja -

Dostupno u više komada 5.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u mašine, omogućujući vam da poboljšate učinkovitost proizvodnje.

5

Dostupno u više komada 5
5RSD 405
10RSD 810
15RSD 1.215
20RSD 1.620
25RSD 2.025
30RSD 2.430
35RSD 2.835
40RSD 3.240
45RSD 3.645
50RSD 3.527
55RSD 3.880
60RSD 4.233
65RSD 4.585
70RSD 4.938
75RSD 5.291

Kupujte na veliko

količinaJedinična cenaPo kolut
5 - 45RSD 80,994RSD 405
50 - 245RSD 70,543RSD 353
250 - 495RSD 56,173RSD 281
500 - 1245RSD 49,641RSD 248
1250+RSD 41,803RSD 209

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

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  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

4.3 A

Maximum Drain Source Voltage

12 V

Series

HEXFET

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

50 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.95V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Typical Gate Charge @ Vgs

10 nC @ 5 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.04mm

Width

1.4mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.02mm

Detalji o proizvodu

P-Channel Power MOSFET 12V to 20V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više