P-Channel MOSFET, 9.7 A, 60 V, 3-Pin DPAK Infineon SPD09P06PLGBTMA1

RS kataloški broj:: 826-9074brend: InfineonProizvođački broj:: SPD09P06PLG
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Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

9.7 A

Maximum Drain Source Voltage

60 V

Series

SIPMOS®

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

400 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

42 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.73mm

Typical Gate Charge @ Vgs

14 nC @ 10 V

Width

6.22mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

2.41mm

Detalji o proizvodu

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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RSD 6.662

RSD 133,248 komadno (u pakovanju od 50) (bez PDV-a)

RSD 7.995

RSD 159,898 komadno (u pakovanju od 50) (s PDV-om)

P-Channel MOSFET, 9.7 A, 60 V, 3-Pin DPAK Infineon SPD09P06PLGBTMA1
Odaberite vrstu pakovanja

Standard

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 50.

Proizvodnja -

Dostupno u više komada 50.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u mašine, omogućujući vam da poboljšate učinkovitost proizvodnje.

50

Dostupno u više komada 50
50RSD 6.662
100RSD 13.325
150RSD 19.987
200RSD 26.650
250RSD 21.555
300RSD 25.866
350RSD 30.177
400RSD 34.488
450RSD 38.799
500RSD 43.110
550RSD 47.420
600RSD 51.731
650RSD 56.042
700RSD 60.353
750RSD 64.664

RSD 6.662

RSD 133,248 komadno (u pakovanju od 50) (bez PDV-a)

RSD 7.995

RSD 159,898 komadno (u pakovanju od 50) (s PDV-om)

P-Channel MOSFET, 9.7 A, 60 V, 3-Pin DPAK Infineon SPD09P06PLGBTMA1
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakovanja

Standard

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 50.

Proizvodnja -

Dostupno u više komada 50.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u mašine, omogućujući vam da poboljšate učinkovitost proizvodnje.

50

Dostupno u više komada 50
50RSD 6.662
100RSD 13.325
150RSD 19.987
200RSD 26.650
250RSD 21.555
300RSD 25.866
350RSD 30.177
400RSD 34.488
450RSD 38.799
500RSD 43.110
550RSD 47.420
600RSD 51.731
650RSD 56.042
700RSD 60.353
750RSD 64.664

Kupujte na veliko

količinaJedinična cenaPo pakovanje
50 - 200RSD 133,248RSD 6.662
250 - 950RSD 86,219RSD 4.311
1000 - 2450RSD 71,849RSD 3.592
2500+RSD 65,317RSD 3.266

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

9.7 A

Maximum Drain Source Voltage

60 V

Series

SIPMOS®

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

400 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

42 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.73mm

Typical Gate Charge @ Vgs

14 nC @ 10 V

Width

6.22mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

2.41mm

Detalji o proizvodu

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više