IXYS HiperFET, Polar N-Channel MOSFET, 66 A, 500 V, 4-Pin SOT-227 IXFN80N50P
Tehnička dokumentacija
Tehnički podaci
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
66 A
Maximum Drain Source Voltage
500 V
Package Type
SOT-227
Series
HiperFET, Polar
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
700 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
25.07mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Length
38.2mm
Typical Gate Charge @ Vgs
195 nC @ 10 V
Height
9.6mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Zamisliti. Stvoriti. Surađivati
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KM 896,54
KM 89,654 Each (In a Tube of 10) (bez PDV-a)
KM 1.048,95
KM 104,895 Each (In a Tube of 10) (s PDV-om)
10
KM 896,54
KM 89,654 Each (In a Tube of 10) (bez PDV-a)
KM 1.048,95
KM 104,895 Each (In a Tube of 10) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
10
Informacije o stanju skladišta trenutno nisu dostupne.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
66 A
Maximum Drain Source Voltage
500 V
Package Type
SOT-227
Series
HiperFET, Polar
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
700 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
25.07mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Length
38.2mm
Typical Gate Charge @ Vgs
195 nC @ 10 V
Height
9.6mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda