IXYS X2-Class N-Channel MOSFET, 100 A, 650 V, 3-Pin TO-264P IXTK102N65X2
Tehnička dokumentacija
Tehnički podaci
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
650 V
Series
X2-Class
Package Type
TO-264P
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
30 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
1.04 kW
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
26.3mm
Length
20.3mm
Typical Gate Charge @ Vgs
152 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
Height
5.3mm
Zemlja podrijetla
United States
Detalji o proizvodu
N-channel Power MOSFET, IXYS X2-Class Series
The IXYS X2 class Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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RSD 69.498
RSD 2.779,911 komad (u Tubi od 25) (bez PDV-a)
RSD 83.397
RSD 3.335,893 komad (u Tubi od 25) (s PDV-om)
25
RSD 69.498
RSD 2.779,911 komad (u Tubi od 25) (bez PDV-a)
RSD 83.397
RSD 3.335,893 komad (u Tubi od 25) (s PDV-om)
25
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Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
650 V
Series
X2-Class
Package Type
TO-264P
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
30 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
1.04 kW
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
26.3mm
Length
20.3mm
Typical Gate Charge @ Vgs
152 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
Height
5.3mm
Zemlja podrijetla
United States
Detalji o proizvodu
N-channel Power MOSFET, IXYS X2-Class Series
The IXYS X2 class Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda