IXYS MII100-12A3 Series IGBT Module, 135 A 1200 V, 7-Pin Y4 M5, Panel Mount

RS kataloški broj:: 193-874brend: IXYSProizvođački broj:: MII100-12A3
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Prikaži sve u IGBTs

Tehnička dokumentacija

Tehnički podaci

Brand

IXYS

Maximum Continuous Collector Current

135 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Package Type

Y4 M5

Configuration

Series

Mounting Type

Panel Mount

Channel Type

N

Pin Count

7

Transistor Configuration

Series

Dimensions

94 x 34 x 30mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-40 °C

Detalji o proizvodu

IGBT Modules, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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RSD 13.717

Each (bez PDV-a)

RSD 16.460

Each (s PDV-om)

IXYS MII100-12A3 Series IGBT Module, 135 A 1200 V, 7-Pin Y4 M5, Panel Mount

1

Dostupno u više komada 1
1RSD 13.717
2RSD 27.433
3RSD 41.150
4RSD 54.867
5RSD 68.583
6RSD 82.300
7RSD 96.017
8RSD 109.733
9RSD 123.450
10RSD 137.167
11RSD 150.883
12RSD 164.600
13RSD 178.317
14RSD 192.033
15RSD 205.750

RSD 13.717

Each (bez PDV-a)

RSD 16.460

Each (s PDV-om)

IXYS MII100-12A3 Series IGBT Module, 135 A 1200 V, 7-Pin Y4 M5, Panel Mount
Informacije o stanju skladišta trenutno nisu dostupne.

1

Dostupno u više komada 1
1RSD 13.717
2RSD 27.433
3RSD 41.150
4RSD 54.867
5RSD 68.583
6RSD 82.300
7RSD 96.017
8RSD 109.733
9RSD 123.450
10RSD 137.167
11RSD 150.883
12RSD 164.600
13RSD 178.317
14RSD 192.033
15RSD 205.750

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

IXYS

Maximum Continuous Collector Current

135 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Package Type

Y4 M5

Configuration

Series

Mounting Type

Panel Mount

Channel Type

N

Pin Count

7

Transistor Configuration

Series

Dimensions

94 x 34 x 30mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-40 °C

Detalji o proizvodu

IGBT Modules, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više