Tehnička dokumentacija
Tehnički podaci
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
660 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
49 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.93mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
10.71mm
Typical Gate Charge @ Vgs
38.4 nC @ 10 V
Number of Elements per Chip
1
Height
16.13mm
Forward Diode Voltage
1.4V
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
High Voltage (HV) MOSFET
High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.
MOSFET Transistors, MagnaChip
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 184,195
komad (u Tubi od 10) (bez PDV-a)
RSD 221,034
komad (u Tubi od 10) (s PDV-om)
10
RSD 184,195
komad (u Tubi od 10) (bez PDV-a)
RSD 221,034
komad (u Tubi od 10) (s PDV-om)
10
Kupujte na veliko
količina | Jedinična cena | Po cev |
---|---|---|
10 - 40 | RSD 184,195 | RSD 1.842 |
50 - 90 | RSD 172,438 | RSD 1.724 |
100 - 240 | RSD 168,519 | RSD 1.685 |
250 - 490 | RSD 161,987 | RSD 1.620 |
500+ | RSD 154,149 | RSD 1.541 |
Tehnička dokumentacija
Tehnički podaci
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
660 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
49 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.93mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
10.71mm
Typical Gate Charge @ Vgs
38.4 nC @ 10 V
Number of Elements per Chip
1
Height
16.13mm
Forward Diode Voltage
1.4V
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
High Voltage (HV) MOSFET
High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.