Nexperia PBSS4140DPN,115 Dual NPN/PNP Transistor, 1 A, 40 V, 6-Pin TSOP
Tehnička dokumentacija
Tehnički podaci
Brand
NexperiaTransistor Type
NPN/PNP
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
40 V
Package Type
TSOP
Mounting Type
Surface Mount
Maximum Power Dissipation
370 mW
Minimum DC Current Gain
300
Transistor Configuration
Isolated
Maximum Collector Base Voltage
40 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
150 MHz
Pin Count
6
Number of Elements per Chip
2
Dimensions
1 x 3.1 x 1.7mm
Maximum Operating Temperature
+150 °C
Zemlja podrijetla
Malaysia
Detalji o proizvodu
Low Saturation Voltage Dual NPN/PNP Transistors, Nexperia
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage Dual NPN/PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
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Proverite ponovno kasnije.
RSD 67,93
komadno (u pakovanju od 10) (bez PDV-a)
RSD 81,516
komadno (u pakovanju od 10) (s PDV-om)
Standard
10
RSD 67,93
komadno (u pakovanju od 10) (bez PDV-a)
RSD 81,516
komadno (u pakovanju od 10) (s PDV-om)
Standard
10
Kupujte na veliko
| količina | Jedinična cena | Po pakovanje |
|---|---|---|
| 10 - 40 | RSD 67,93 | RSD 679 |
| 50 - 90 | RSD 57,479 | RSD 575 |
| 100+ | RSD 47,029 | RSD 470 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
NexperiaTransistor Type
NPN/PNP
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
40 V
Package Type
TSOP
Mounting Type
Surface Mount
Maximum Power Dissipation
370 mW
Minimum DC Current Gain
300
Transistor Configuration
Isolated
Maximum Collector Base Voltage
40 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
150 MHz
Pin Count
6
Number of Elements per Chip
2
Dimensions
1 x 3.1 x 1.7mm
Maximum Operating Temperature
+150 °C
Zemlja podrijetla
Malaysia
Detalji o proizvodu
Low Saturation Voltage Dual NPN/PNP Transistors, Nexperia
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage Dual NPN/PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda