Tehnička dokumentacija
Tehnički podaci
Brand
NXPChannel Type
N
Idss Drain-Source Cut-off Current
12 to 25mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
+25 V
Maximum Drain Gate Voltage
25V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23 (TO-236AB)
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Minimum Operating Temperature
-65 °C
Height
1mm
Maximum Operating Temperature
+150 °C
Length
3mm
Width
1.4mm
Zemlja podrijetla
China
Detalji o proizvodu
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 62,705
komadno (u pakovanju od 10) (bez PDV-a)
RSD 75,246
komadno (u pakovanju od 10) (s PDV-om)
Standard
10
RSD 62,705
komadno (u pakovanju od 10) (bez PDV-a)
RSD 75,246
komadno (u pakovanju od 10) (s PDV-om)
Standard
10
Kupujte na veliko
količina | Jedinična cena | Po pakovanje |
---|---|---|
10 - 90 | RSD 62,705 | RSD 627 |
100 - 240 | RSD 49,641 | RSD 496 |
250 - 990 | RSD 45,722 | RSD 457 |
1000+ | RSD 39,19 | RSD 392 |
Tehnička dokumentacija
Tehnički podaci
Brand
NXPChannel Type
N
Idss Drain-Source Cut-off Current
12 to 25mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
+25 V
Maximum Drain Gate Voltage
25V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23 (TO-236AB)
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Minimum Operating Temperature
-65 °C
Height
1mm
Maximum Operating Temperature
+150 °C
Length
3mm
Width
1.4mm
Zemlja podrijetla
China
Detalji o proizvodu
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.