Tehnička dokumentacija
Tehnički podaci
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
7 A
Maximum Drain Source Voltage
30 V
Package Type
TSOP
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
3.1mm
Typical Gate Charge @ Vgs
12 nC @ 10 V
Transistor Material
Si
Width
1.7mm
Number of Elements per Chip
1
Height
1mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-Channel Power MOSFET, 30V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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Proverite ponovno kasnije.
P.O.A.
25
P.O.A.
25
Tehnička dokumentacija
Tehnički podaci
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
7 A
Maximum Drain Source Voltage
30 V
Package Type
TSOP
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
3.1mm
Typical Gate Charge @ Vgs
12 nC @ 10 V
Transistor Material
Si
Width
1.7mm
Number of Elements per Chip
1
Height
1mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu