N-Channel MOSFET, 200 mA, 60 V, 3-Pin TO-92 onsemi 2N7000
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
60 V
Package Type
TO-92
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
400 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.2mm
Width
4.19mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
5.33mm
Detalji o proizvodu
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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Proverite ponovno kasnije.
RSD 69,236
komadno (u pakovanju od 20) (bez PDV-a)
RSD 83,083
komadno (u pakovanju od 20) (s PDV-om)
20
RSD 69,236
komadno (u pakovanju od 20) (bez PDV-a)
RSD 83,083
komadno (u pakovanju od 20) (s PDV-om)
20
Kupujte na veliko
| količina | Jedinična cena | Po pakovanje |
|---|---|---|
| 20 - 20 | RSD 69,236 | RSD 1.385 |
| 40 - 80 | RSD 53,56 | RSD 1.071 |
| 100 - 180 | RSD 49,641 | RSD 993 |
| 200+ | RSD 44,416 | RSD 888 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
60 V
Package Type
TO-92
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
400 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.2mm
Width
4.19mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
5.33mm
Detalji o proizvodu
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda