Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
340 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
330 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
0.7 nC @ 4.5 V
Width
1.35mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.9mm
Detalji o proizvodu
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 10,451
komadno (u pakovanju od 100) (bez PDV-a)
RSD 12,541
komadno (u pakovanju od 100) (s PDV-om)
100
RSD 10,451
komadno (u pakovanju od 100) (bez PDV-a)
RSD 12,541
komadno (u pakovanju od 100) (s PDV-om)
100
Kupujte na veliko
količina | Jedinična cena | Po pakovanje |
---|---|---|
100 - 100 | RSD 10,451 | RSD 1.045 |
200 - 900 | RSD 9,144 | RSD 914 |
1000+ | RSD 7,838 | RSD 784 |
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
340 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
330 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
0.7 nC @ 4.5 V
Width
1.35mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.9mm
Detalji o proizvodu