onsemi SuperFET II N-Channel MOSFET, 37 A, 600 V, 3-Pin TO-220 FCP104N60F
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
37 A
Maximum Drain Source Voltage
600 V
Series
SuperFET II
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
104 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
357 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.672mm
Number of Elements per Chip
1
Length
10.36mm
Typical Gate Charge @ Vgs
110 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
15.215mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor
Fairchild added the SuperFET® II high-voltage power MOSFET family using the Super Junction Technology. It provides best-in-class robust body diode performance in AC-DC Switch Mode Power Supplies (SMPS) applications such as servers, telecom, computing, industrial power supply, UPS/ESS, solar inverter, lighting applications, which require high power density, system efficiency and reliability.
Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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RSD 1.079
RSD 1.079 Each (bez PDV-a)
RSD 1.295
RSD 1.295 Each (s PDV-om)
Standard
1
RSD 1.079
RSD 1.079 Each (bez PDV-a)
RSD 1.295
RSD 1.295 Each (s PDV-om)
Standard
1
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Proverite ponovno kasnije.
| količina | Jedinična cena |
|---|---|
| 1 - 9 | RSD 1.079 |
| 10+ | RSD 944 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
37 A
Maximum Drain Source Voltage
600 V
Series
SuperFET II
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
104 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
357 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.672mm
Number of Elements per Chip
1
Length
10.36mm
Typical Gate Charge @ Vgs
110 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
15.215mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor
Fairchild added the SuperFET® II high-voltage power MOSFET family using the Super Junction Technology. It provides best-in-class robust body diode performance in AC-DC Switch Mode Power Supplies (SMPS) applications such as servers, telecom, computing, industrial power supply, UPS/ESS, solar inverter, lighting applications, which require high power density, system efficiency and reliability.
Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda