Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
51 A
Maximum Drain Source Voltage
100 V
Package Type
PQFN8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
12.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
63 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Width
5.85mm
Length
5mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Series
PowerTrench
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
1.05mm
Detalji o proizvodu
N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 239,062
komadno (u pakovanju od 25) (bez PDV-a)
RSD 286,874
komadno (u pakovanju od 25) (s PDV-om)
25
RSD 239,062
komadno (u pakovanju od 25) (bez PDV-a)
RSD 286,874
komadno (u pakovanju od 25) (s PDV-om)
25
Kupujte na veliko
količina | Jedinična cena | Po pakovanje |
---|---|---|
25 - 75 | RSD 239,062 | RSD 5.977 |
100 - 475 | RSD 190,727 | RSD 4.768 |
500 - 975 | RSD 168,519 | RSD 4.213 |
1000+ | RSD 142,392 | RSD 3.560 |
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
51 A
Maximum Drain Source Voltage
100 V
Package Type
PQFN8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
12.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
63 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Width
5.85mm
Length
5mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Series
PowerTrench
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
1.05mm
Detalji o proizvodu