Tehnička dokumentacija
Tehnički podaci
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
12 A
Maximum Collector Emitter Voltage
400 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
100 W
Minimum DC Current Gain
8, 15
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
9.9 x 4.5 x 9.2mm
Detalji o proizvodu
High Voltage NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
RSD 12.018
RSD 240,368 komad (u Tubi od 50) (bez PDV-a)
RSD 14.422
RSD 288,442 komad (u Tubi od 50) (s PDV-om)
50
RSD 12.018
RSD 240,368 komad (u Tubi od 50) (bez PDV-a)
RSD 14.422
RSD 288,442 komad (u Tubi od 50) (s PDV-om)
50
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
količina | Jedinična cena | Po cev |
---|---|---|
50 - 50 | RSD 240,368 | RSD 12.018 |
100+ | RSD 181,583 | RSD 9.079 |
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
12 A
Maximum Collector Emitter Voltage
400 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
100 W
Minimum DC Current Gain
8, 15
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
9.9 x 4.5 x 9.2mm
Detalji o proizvodu
High Voltage NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.