P-Channel MOSFET, 47 A, 60 V, 3-Pin TO-220AB onsemi FQP47P06
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
47 A
Maximum Drain Source Voltage
60 V
Series
QFET
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
26 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
4.7mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.1mm
Typical Gate Charge @ Vgs
84 nC @ 10 V
Height
9.4mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
QFET® P-Channel MOSFET, Fairchild Semiconductor
Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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Proverite ponovno kasnije.
RSD 411,50
komad (u Tubi od 50) (bez PDV-a)
RSD 493,80
komad (u Tubi od 50) (s PDV-om)
50
RSD 411,50
komad (u Tubi od 50) (bez PDV-a)
RSD 493,80
komad (u Tubi od 50) (s PDV-om)
50
Kupujte na veliko
| količina | Jedinična cena | Po cev |
|---|---|---|
| 50 - 200 | RSD 411,50 | RSD 20.575 |
| 250+ | RSD 404,968 | RSD 20.248 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
47 A
Maximum Drain Source Voltage
60 V
Series
QFET
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
26 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
4.7mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.1mm
Typical Gate Charge @ Vgs
84 nC @ 10 V
Height
9.4mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
QFET® P-Channel MOSFET, Fairchild Semiconductor
Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda