N-Channel MOSFET, 5.5 A, 800 V, 3-Pin TO-220F onsemi FQPF6N80C

RS kataloški broj:: 671-5290brend: onsemiProizvođački broj:: FQPF6N80C
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Tehnička dokumentacija

Tehnički podaci

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

5.5 A

Maximum Drain Source Voltage

800 V

Series

QFET

Package Type

TO-220F

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2.5 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

51 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.7mm

Transistor Material

Si

Typical Gate Charge @ Vgs

21 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.16mm

Minimum Operating Temperature

-55 °C

Height

9.19mm

Zemlja podrijetla

Malaysia

Detalji o proizvodu

QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor

Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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RSD 378,841

komadno (u pakovanju od 5) (bez PDV-a)

RSD 454,609

komadno (u pakovanju od 5) (s PDV-om)

N-Channel MOSFET, 5.5 A, 800 V, 3-Pin TO-220F onsemi FQPF6N80C
Odaberite vrstu pakovanja

RSD 378,841

komadno (u pakovanju od 5) (bez PDV-a)

RSD 454,609

komadno (u pakovanju od 5) (s PDV-om)

N-Channel MOSFET, 5.5 A, 800 V, 3-Pin TO-220F onsemi FQPF6N80C
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakovanja

Kupujte na veliko

količinaJedinična cenaPo pakovanje
5 - 5RSD 378,841RSD 1.894
10+RSD 326,587RSD 1.633

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PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

5.5 A

Maximum Drain Source Voltage

800 V

Series

QFET

Package Type

TO-220F

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2.5 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

51 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.7mm

Transistor Material

Si

Typical Gate Charge @ Vgs

21 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.16mm

Minimum Operating Temperature

-55 °C

Height

9.19mm

Zemlja podrijetla

Malaysia

Detalji o proizvodu

QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor

Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više