N-Channel MOSFET, 56 A, 100 V, 3-Pin TO-220AB onsemi HUF75639P3

RS kataloški broj:: 124-1674brend: onsemiProizvođački broj:: HUF75639P3
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Tehnička dokumentacija

Tehnički podaci

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

56 A

Maximum Drain Source Voltage

100 V

Series

UltraFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

25 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

200 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.83mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.67mm

Typical Gate Charge @ Vgs

110 nC @ 20 V

Height

9.4mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

UltraFET® MOSFET, Fairchild Semiconductor

UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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RSD 385,373

komad (u Tubi od 50) (bez PDV-a)

RSD 462,448

komad (u Tubi od 50) (s PDV-om)

N-Channel MOSFET, 56 A, 100 V, 3-Pin TO-220AB onsemi HUF75639P3

RSD 385,373

komad (u Tubi od 50) (bez PDV-a)

RSD 462,448

komad (u Tubi od 50) (s PDV-om)

N-Channel MOSFET, 56 A, 100 V, 3-Pin TO-220AB onsemi HUF75639P3
Informacije o stanju skladišta trenutno nisu dostupne.

Kupujte na veliko

količinaJedinična cenaPo cev
50 - 200RSD 385,373RSD 19.269
250+RSD 359,246RSD 17.962

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design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
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Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

56 A

Maximum Drain Source Voltage

100 V

Series

UltraFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

25 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

200 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.83mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.67mm

Typical Gate Charge @ Vgs

110 nC @ 20 V

Height

9.4mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

UltraFET® MOSFET, Fairchild Semiconductor

UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više