Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
min. 2mA
Maximum Gate Source Voltage
-35 V
Maximum Drain Gate Voltage
35V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
100 Ω
Mounting Type
Through Hole
Package Type
TO-92
Pin Count
3
Drain Gate On-Capacitance
28pF
Source Gate On-Capacitance
28pF
Dimensions
5.2 x 4.19 x 5.33mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
5.2mm
Height
5.33mm
Width
4.19mm
Detalji o proizvodu
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 47,029
komad (isporučivo u kutiji) (bez PDV-a)
RSD 56,435
komad (isporučivo u kutiji) (s PDV-om)
Proizvodno pakovanje (kutija)
500
RSD 47,029
komad (isporučivo u kutiji) (bez PDV-a)
RSD 56,435
komad (isporučivo u kutiji) (s PDV-om)
Proizvodno pakovanje (kutija)
500
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
min. 2mA
Maximum Gate Source Voltage
-35 V
Maximum Drain Gate Voltage
35V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
100 Ω
Mounting Type
Through Hole
Package Type
TO-92
Pin Count
3
Drain Gate On-Capacitance
28pF
Source Gate On-Capacitance
28pF
Dimensions
5.2 x 4.19 x 5.33mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
5.2mm
Height
5.33mm
Width
4.19mm
Detalji o proizvodu
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.