Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
min. 2mA
Maximum Gate Source Voltage
-35 V
Maximum Drain Gate Voltage
35V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
100 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Drain Gate On-Capacitance
28pF
Source Gate On-Capacitance
28pF
Dimensions
2.92 x 1.3 x 0.93mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
2.92mm
Height
0.93mm
Width
1.3mm
Detalji o proizvodu
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 61,398
komadno (u pakovanju od 25) (bez PDV-a)
RSD 73,678
komadno (u pakovanju od 25) (s PDV-om)
25
RSD 61,398
komadno (u pakovanju od 25) (bez PDV-a)
RSD 73,678
komadno (u pakovanju od 25) (s PDV-om)
25
Kupujte na veliko
količina | Jedinična cena | Po pakovanje |
---|---|---|
25 - 75 | RSD 61,398 | RSD 1.535 |
100 - 975 | RSD 27,433 | RSD 686 |
1000 - 2975 | RSD 20,902 | RSD 523 |
3000+ | RSD 16,983 | RSD 425 |
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
min. 2mA
Maximum Gate Source Voltage
-35 V
Maximum Drain Gate Voltage
35V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
100 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Drain Gate On-Capacitance
28pF
Source Gate On-Capacitance
28pF
Dimensions
2.92 x 1.3 x 0.93mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
2.92mm
Height
0.93mm
Width
1.3mm
Detalji o proizvodu
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.