Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
50 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
36 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
6.73mm
Width
6.22mm
Transistor Material
Si
Typical Gate Charge @ Vgs
15 nC @ 10 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
2.38mm
Detalji o proizvodu
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 158,068
komadno (u pakovanju od 5) (bez PDV-a)
RSD 189,682
komadno (u pakovanju od 5) (s PDV-om)
5
RSD 158,068
komadno (u pakovanju od 5) (bez PDV-a)
RSD 189,682
komadno (u pakovanju od 5) (s PDV-om)
5
Kupujte na veliko
količina | Jedinična cena | Po pakovanje |
---|---|---|
5 - 45 | RSD 158,068 | RSD 790 |
50+ | RSD 130,635 | RSD 653 |
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
50 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
36 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
6.73mm
Width
6.22mm
Transistor Material
Si
Typical Gate Charge @ Vgs
15 nC @ 10 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
2.38mm
Detalji o proizvodu