Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
30 V
Package Type
WDFN
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.3 W
Maximum Gate Source Voltage
-8 V, +8 V
Width
2mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
2mm
Typical Gate Charge @ Vgs
5.4 nC @ 4.5 V
Height
0.75mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
Malaysia
Detalji o proizvodu
Dual N-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 64,011
komad (u Reel od 3000) (bez PDV-a)
RSD 76,813
komad (u Reel od 3000) (s PDV-om)
3000
RSD 64,011
komad (u Reel od 3000) (bez PDV-a)
RSD 76,813
komad (u Reel od 3000) (s PDV-om)
3000
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
30 V
Package Type
WDFN
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.3 W
Maximum Gate Source Voltage
-8 V, +8 V
Width
2mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
2mm
Typical Gate Charge @ Vgs
5.4 nC @ 4.5 V
Height
0.75mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
Malaysia
Detalji o proizvodu