Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
203 A
Maximum Drain Source Voltage
80 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
3.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.1mm
Typical Gate Charge @ Vgs
85 nC @ 10 V
Width
5.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.1mm
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 1.064,674
komadno (u pakovanju od 5) (bez PDV-a)
RSD 1.277,609
komadno (u pakovanju od 5) (s PDV-om)
5
RSD 1.064,674
komadno (u pakovanju od 5) (bez PDV-a)
RSD 1.277,609
komadno (u pakovanju od 5) (s PDV-om)
5
Kupujte na veliko
količina | Jedinična cena | Po pakovanje |
---|---|---|
5 - 5 | RSD 1.064,674 | RSD 5.323 |
10 - 95 | RSD 920,976 | RSD 4.605 |
100 - 245 | RSD 770,746 | RSD 3.854 |
250 - 495 | RSD 751,151 | RSD 3.756 |
500+ | RSD 738,087 | RSD 3.690 |
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
203 A
Maximum Drain Source Voltage
80 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
3.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.1mm
Typical Gate Charge @ Vgs
85 nC @ 10 V
Width
5.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.1mm