Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
313 A
Maximum Drain Source Voltage
40 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
850 μΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
167 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Typical Gate Charge @ Vgs
143 @ 10 V nC
Width
5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.9mm
Height
0.95mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 431,095
komad (u Reel od 3000) (bez PDV-a)
RSD 517,314
komad (u Reel od 3000) (s PDV-om)
3000
RSD 431,095
komad (u Reel od 3000) (bez PDV-a)
RSD 517,314
komad (u Reel od 3000) (s PDV-om)
3000
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
313 A
Maximum Drain Source Voltage
40 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
850 μΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
167 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Typical Gate Charge @ Vgs
143 @ 10 V nC
Width
5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.9mm
Height
0.95mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V