Dual N/P-Channel MOSFET, 250 mA, 280 mA, 20 V, 6-Pin SOT-963 ON Semiconductor NTUD3169CZT5G
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N, P
Maximum Continuous Drain Current
250 mA, 280 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-963
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
4.5 Ω, 10 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
200 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
1.05mm
Width
0.85mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.4mm
Detalji o proizvodu
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.
MOSFET Transistors, ON Semiconductor
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P.O.A.
25
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Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N, P
Maximum Continuous Drain Current
250 mA, 280 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-963
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
4.5 Ω, 10 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
200 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
1.05mm
Width
0.85mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.4mm
Detalji o proizvodu
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.
MOSFET Transistors, ON Semiconductor
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda