Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
650 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
162 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Typical Gate Charge @ Vgs
34 @ 10 V nC
Length
10.67mm
Maximum Operating Temperature
+150 °C
Width
9.65mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Automotive Standard
AEC-Q101
Height
4.58mm
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 431,095
komad (u Reel od 800) (bez PDV-a)
RSD 517,314
komad (u Reel od 800) (s PDV-om)
800
RSD 431,095
komad (u Reel od 800) (bez PDV-a)
RSD 517,314
komad (u Reel od 800) (s PDV-om)
800
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
650 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
162 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Typical Gate Charge @ Vgs
34 @ 10 V nC
Length
10.67mm
Maximum Operating Temperature
+150 °C
Width
9.65mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Automotive Standard
AEC-Q101
Height
4.58mm