Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
21 A
Maximum Drain Source Voltage
60 V
Package Type
LFPAK, SOT-669
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
43 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
24 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
4.25mm
Length
5mm
Typical Gate Charge @ Vgs
5.8 @ 10 V nC
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Height
1.15mm
Automotive Standard
AEC-Q101
Forward Diode Voltage
1.2V
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 71,849
komad (u Reel od 3000) (bez PDV-a)
RSD 86,219
komad (u Reel od 3000) (s PDV-om)
3000
RSD 71,849
komad (u Reel od 3000) (bez PDV-a)
RSD 86,219
komad (u Reel od 3000) (s PDV-om)
3000
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
21 A
Maximum Drain Source Voltage
60 V
Package Type
LFPAK, SOT-669
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
43 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
24 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
4.25mm
Length
5mm
Typical Gate Charge @ Vgs
5.8 @ 10 V nC
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Height
1.15mm
Automotive Standard
AEC-Q101
Forward Diode Voltage
1.2V