Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
1.2 to 3mA
Maximum Drain Source Voltage
30 V
Maximum Drain Gate Voltage
-30V
Configuration
Single
Transistor Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-883
Pin Count
3
Drain Gate On-Capacitance
4pF
Source Gate On-Capacitance
4pF
Dimensions
1.08 x 0.68 x 0.41mm
Maximum Power Dissipation
100 mW
Height
0.41mm
Width
0.68mm
Maximum Operating Temperature
+150 °C
Length
1.08mm
Detalji o proizvodu
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 40,497
komad (isporučivo u Reel) (bez PDV-a)
RSD 48,596
komad (isporučivo u Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
50
RSD 40,497
komad (isporučivo u Reel) (bez PDV-a)
RSD 48,596
komad (isporučivo u Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
50
Kupujte na veliko
količina | Jedinična cena | Po kolut |
---|---|---|
50 - 450 | RSD 40,497 | RSD 2.025 |
500 - 950 | RSD 35,271 | RSD 1.764 |
1000 - 2450 | RSD 31,352 | RSD 1.568 |
2500 - 4950 | RSD 28,74 | RSD 1.437 |
5000+ | RSD 27,433 | RSD 1.372 |
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
1.2 to 3mA
Maximum Drain Source Voltage
30 V
Maximum Drain Gate Voltage
-30V
Configuration
Single
Transistor Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-883
Pin Count
3
Drain Gate On-Capacitance
4pF
Source Gate On-Capacitance
4pF
Dimensions
1.08 x 0.68 x 0.41mm
Maximum Power Dissipation
100 mW
Height
0.41mm
Width
0.68mm
Maximum Operating Temperature
+150 °C
Length
1.08mm
Detalji o proizvodu
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.