Tehnička dokumentacija
Tehnički podaci
Brand
SemelabChannel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
65 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
7V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Width
3.7mm
Transistor Material
Si
Length
6.7mm
Height
1.7mm
Series
TetraFET
Zemlja podrijetla
United Kingdom
Detalji o proizvodu
RF MOSFET Transistors, Semelab
MOSFET Transistors, Semelab
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 1.097,333
Each (In a Tray of 50) (bez PDV-a)
RSD 1.316,80
Each (In a Tray of 50) (s PDV-om)
50
RSD 1.097,333
Each (In a Tray of 50) (bez PDV-a)
RSD 1.316,80
Each (In a Tray of 50) (s PDV-om)
50
Tehnička dokumentacija
Tehnički podaci
Brand
SemelabChannel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
65 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
7V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Width
3.7mm
Transistor Material
Si
Length
6.7mm
Height
1.7mm
Series
TetraFET
Zemlja podrijetla
United Kingdom
Detalji o proizvodu