Semikron Danfoss SKM200GB12E4 Dual Half Bridge IGBT Module, 314 A 1200 V, 7-Pin SEMITRANS3, Panel Mount
Tehnička dokumentacija
Tehnički podaci
Brand
Semikron DanfossMaximum Continuous Collector Current
314 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Configuration
Dual Half Bridge
Package Type
SEMITRANS3
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Transistor Configuration
Series
Dimensions
106.4 x 61.4 x 30mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Detalji o proizvodu
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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RSD 45.879
RSD 45.879 Each (bez PDV-a)
RSD 55.055
RSD 55.055 Each (s PDV-om)
1
RSD 45.879
RSD 45.879 Each (bez PDV-a)
RSD 55.055
RSD 55.055 Each (s PDV-om)
1
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Proverite ponovno kasnije.
| količina | Jedinična cena |
|---|---|
| 1 - 1 | RSD 45.879 |
| 2 - 4 | RSD 44.208 |
| 5 - 9 | RSD 40.255 |
| 10 - 19 | RSD 37.446 |
| 20+ | RSD 36.966 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
Semikron DanfossMaximum Continuous Collector Current
314 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Configuration
Dual Half Bridge
Package Type
SEMITRANS3
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Transistor Configuration
Series
Dimensions
106.4 x 61.4 x 30mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Detalji o proizvodu
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda