Semikron SK25GAL063 Single IGBT Module, 30 A 600 V, 4-Pin SEMITOP1, PCB Mount
Tehnička dokumentacija
Tehnički podaci
Brand
SemikronMaximum Continuous Collector Current
30 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Package Type
SEMITOP1
Configuration
Single
Mounting Type
PCB Mount
Channel Type
N
Pin Count
4
Transistor Configuration
Single
Dimensions
31 x 24 x 15.43mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+150 °C
Zemlja podrijetla
Italy
Detalji o proizvodu
Single IGBT Modules
SEMIKRON offers IGBT (Insulated-Gate Bipolar Transistor) modules in SEMITRANS, SEMiX and SEMITOP packages in different topologies, current and voltage ratings.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Tehnička dokumentacija
Tehnički podaci
Brand
SemikronMaximum Continuous Collector Current
30 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Package Type
SEMITOP1
Configuration
Single
Mounting Type
PCB Mount
Channel Type
N
Pin Count
4
Transistor Configuration
Single
Dimensions
31 x 24 x 15.43mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+150 °C
Zemlja podrijetla
Italy
Detalji o proizvodu
Single IGBT Modules
SEMIKRON offers IGBT (Insulated-Gate Bipolar Transistor) modules in SEMITRANS, SEMiX and SEMITOP packages in different topologies, current and voltage ratings.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda