Semikron SKM100GB12T4 Dual Half Bridge IGBT Module, 160 A 1200 V, 7-Pin SEMITRANS2, Panel Mount

RS kataloški broj:: 687-4958brend: SemikronProizvođački broj:: SKM100GB12T4Distrelec Article No.: 17101152
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Tehnička dokumentacija

Tehnički podaci

Maximum Continuous Collector Current

160 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Package Type

SEMITRANS2

Configuration

Dual Half Bridge

Mounting Type

Panel Mount

Channel Type

N

Pin Count

7

Transistor Configuration

Series

Dimensions

94 x 34 x 30.1mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+175 °C

Width

34mm

Detalji o proizvodu

Dual IGBT Modules

A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.

IGBT Modules, Semikron

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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RSD 18.969

Each (bez PDV-a)

RSD 22.763

Each (s PDV-om)

Semikron SKM100GB12T4 Dual Half Bridge IGBT Module, 160 A 1200 V, 7-Pin SEMITRANS2, Panel Mount

RSD 18.969

Each (bez PDV-a)

RSD 22.763

Each (s PDV-om)

Semikron SKM100GB12T4 Dual Half Bridge IGBT Module, 160 A 1200 V, 7-Pin SEMITRANS2, Panel Mount
Informacije o stanju skladišta trenutno nisu dostupne.

Kupujte na veliko

količinaJedinična cena
1 - 1RSD 18.969
2 - 4RSD 18.281
5 - 9RSD 18.190
10 - 19RSD 16.694
20+RSD 16.476

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Maximum Continuous Collector Current

160 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Package Type

SEMITRANS2

Configuration

Dual Half Bridge

Mounting Type

Panel Mount

Channel Type

N

Pin Count

7

Transistor Configuration

Series

Dimensions

94 x 34 x 30.1mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+175 °C

Width

34mm

Detalji o proizvodu

Dual IGBT Modules

A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.

IGBT Modules, Semikron

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više