STMicroelectronics STripFET P-Channel MOSFET, 12 A, 30 V, 3-Pin DPAK STD26P3LLH6

RS kataloški broj:: 165-6853robna marka: STMicroelectronicsProizvođački broj:: STD26P3LLH6
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Tehnička dokumentacija

Tehnički podaci

Brand

STMicroelectronics

Channel Type

P

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

30 V

Series

STripFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

45 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

40 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

6.2mm

Length

6.6mm

Typical Gate Charge @ Vgs

12 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Height

2.4mm

Zemlja podrijetla

China

Detalji o proizvodu

P-Channel STripFET™ Power MOSFET, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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Informacije o stanju skladišta trenutno nisu dostupne.

KM 4.645,02

KM 1,858 Each (On a Reel of 2500) (bez PDV-a)

KM 5.434,67

KM 2,174 Each (On a Reel of 2500) (s PDV-om)

STMicroelectronics STripFET P-Channel MOSFET, 12 A, 30 V, 3-Pin DPAK STD26P3LLH6

2500

Dostupno u više komada 2500
2500KM 4.645,02
5000KM 9.290,05
7500KM 13.935,08
10000KM 18.580,10
12500KM 23.225,12
15000KM 27.870,15
17500KM 32.515,18
20000KM 37.160,20
22500KM 41.805,22
25000KM 46.450,25
27500KM 51.095,28
30000KM 55.740,30
32500KM 60.385,32
35000KM 65.030,35
37500KM 69.675,38

KM 4.645,02

KM 1,858 Each (On a Reel of 2500) (bez PDV-a)

KM 5.434,67

KM 2,174 Each (On a Reel of 2500) (s PDV-om)

STMicroelectronics STripFET P-Channel MOSFET, 12 A, 30 V, 3-Pin DPAK STD26P3LLH6
Informacije o stanju skladišta trenutno nisu dostupne.

2500

Dostupno u više komada 2500
2500KM 4.645,02
5000KM 9.290,05
7500KM 13.935,08
10000KM 18.580,10
12500KM 23.225,12
15000KM 27.870,15
17500KM 32.515,18
20000KM 37.160,20
22500KM 41.805,22
25000KM 46.450,25
27500KM 51.095,28
30000KM 55.740,30
32500KM 60.385,32
35000KM 65.030,35
37500KM 69.675,38

Informacije o stanju skladišta trenutno nisu dostupne.

Provjerite ponovno kasnije.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

STMicroelectronics

Channel Type

P

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

30 V

Series

STripFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

45 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

40 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

6.2mm

Length

6.6mm

Typical Gate Charge @ Vgs

12 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Height

2.4mm

Zemlja podrijetla

China

Detalji o proizvodu

P-Channel STripFET™ Power MOSFET, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više