Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
600 V
Package Type
PowerFLAT 8 x 8 HV
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Number of Elements per Chip
1
Width
8.1mm
Length
8.1mm
Typical Gate Charge @ Vgs
44 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Height
0.9mm
Zemlja podrijetla
China
RSD 2.621.842
RSD 873,947 komad (u Reel od 3000) (bez PDV-a)
RSD 3.146.211
RSD 1.048,736 komad (u Reel od 3000) (s PDV-om)
3000
RSD 2.621.842
RSD 873,947 komad (u Reel od 3000) (bez PDV-a)
RSD 3.146.211
RSD 1.048,736 komad (u Reel od 3000) (s PDV-om)
3000
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Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
600 V
Package Type
PowerFLAT 8 x 8 HV
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Number of Elements per Chip
1
Width
8.1mm
Length
8.1mm
Typical Gate Charge @ Vgs
44 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Height
0.9mm
Zemlja podrijetla
China