STMicroelectronics STripFET F7 N-Channel MOSFET, 100 A, 60 V, 3-Pin TO-220 STP100N6F7
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220
Series
STripFET F7
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
5.6 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
12.6 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Width
4.6mm
Number of Elements per Chip
1
Length
10.4mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
9.15mm
Zemlja podrijetla
China
Detalji o proizvodu
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.
MOSFET Transistors, STMicroelectronics
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KM 153,53
KM 3,071 Each (In a Tube of 50) (bez PDV-a)
KM 179,63
KM 3,593 Each (In a Tube of 50) (s PDV-om)
50
KM 153,53
KM 3,071 Each (In a Tube of 50) (bez PDV-a)
KM 179,63
KM 3,593 Each (In a Tube of 50) (s PDV-om)
50
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Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220
Series
STripFET F7
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
5.6 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
12.6 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Width
4.6mm
Number of Elements per Chip
1
Length
10.4mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
9.15mm
Zemlja podrijetla
China
Detalji o proizvodu
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.
MOSFET Transistors, STMicroelectronics
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda