Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
200 V
Series
STripFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
75 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
38 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+150 °C
Height
15.75mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 81,25
€ 3,25 komadno (isporučuje se u cijevi) (bez PDV-a)
€ 95,06
€ 3,802 komadno (isporučuje se u cijevi) (s PDV-om)
Proizvodno pakovanje (cijev)
25
€ 81,25
€ 3,25 komadno (isporučuje se u cijevi) (bez PDV-a)
€ 95,06
€ 3,802 komadno (isporučuje se u cijevi) (s PDV-om)
Proizvodno pakovanje (cijev)
25
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
količina | Jedinična cijena | Po cijev |
---|---|---|
25 - 45 | € 3,25 | € 16,25 |
50 - 120 | € 3,05 | € 15,25 |
125+ | € 2,85 | € 14,25 |
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
200 V
Series
STripFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
75 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
38 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+150 °C
Height
15.75mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu