N-Channel MOSFET, 22 A, 650 V, 3-Pin TO-247 STMicroelectronics STW28N60M2
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
22 A
Maximum Drain Source Voltage
650 V
Series
MDmesh M2
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
170 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
15.75mm
Typical Gate Charge @ Vgs
36 nC @ 10 V
Width
5.15mm
Minimum Operating Temperature
-55 °C
Height
20.15mm
Detalji o proizvodu
N-channel MDmesh™ M2 Series, STMicroelectronics
A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).
MOSFET Transistors, STMicroelectronics
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Proverite ponovno kasnije.
RSD 1.453
RSD 726,33 komadno (u pakovanju od 2) (bez PDV-a)
RSD 1.743
RSD 871,596 komadno (u pakovanju od 2) (s PDV-om)
Standard
2
RSD 1.453
RSD 726,33 komadno (u pakovanju od 2) (bez PDV-a)
RSD 1.743
RSD 871,596 komadno (u pakovanju od 2) (s PDV-om)
Standard
2
Kupujte na veliko
| količina | Jedinična cena | Po pakovanje |
|---|---|---|
| 2 - 8 | RSD 726,33 | RSD 1.453 |
| 10 - 18 | RSD 698,897 | RSD 1.398 |
| 20 - 48 | RSD 655,787 | RSD 1.312 |
| 50 - 98 | RSD 613,984 | RSD 1.228 |
| 100+ | RSD 606,146 | RSD 1.212 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
22 A
Maximum Drain Source Voltage
650 V
Series
MDmesh M2
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
170 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
15.75mm
Typical Gate Charge @ Vgs
36 nC @ 10 V
Width
5.15mm
Minimum Operating Temperature
-55 °C
Height
20.15mm
Detalji o proizvodu
N-channel MDmesh™ M2 Series, STMicroelectronics
A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).
MOSFET Transistors, STMicroelectronics
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda