N-Channel MOSFET, 28 A, 600 V, 3-Pin TO-247 STMicroelectronics STW35N60DM2

Name: N-Channel MOSFET, 28 A, 600 V, 3-Pin TO-247 STMicroelectronics STW35N60DM2
Brand: STMicroelectronics
SKU: 1116482
Availability: LimitedAvailability

RS kataloški broj:: 111-6482brend: STMicroelectronicsProizvođački broj:: STW35N60DM2

Prikaži sve u MOSFETs

Tehnička dokumentacija

Tehnički podaci

Brand

STMicroelectronics

Channel Type

Maximum Continuous Drain Current

28 A

Maximum Drain Source Voltage

600 V

Series

MDmesh DM2

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

Maximum Drain Source Resistance

110 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

Minimum Gate Threshold Voltage

Maximum Power Dissipation

210 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Number of Elements per Chip

Maximum Operating Temperature

+150 °C

Length

15.75mm

Typical Gate Charge @ Vgs

54 nC @ 10 V

Width

5.15mm

Transistor Material

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.6V

Height

20.15mm

Detalji o proizvodu

N-Channel MDmesh DM2 Series, STMicroelectronics

The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.

MOSFET Transistors, STMicroelectronics

Informacije o stanju skladišta trenutno nisu dostupne.

Proverite ponovno kasnije.

Informacije o stanju skladišta trenutno nisu dostupne.

RSD 2.213

RSD 1.106,478 komadno (u pakovanju od 2) (bez PDV-a)

RSD 2.656

RSD 1.327,774 komadno (u pakovanju od 2) (s PDV-om)

N-Channel MOSFET, 28 A, 600 V, 3-Pin TO-247 STMicroelectronics STW35N60DM2

Odaberite vrstu pakovanja

Standard

RSD 2.213

RSD 1.106,478 komadno (u pakovanju od 2) (bez PDV-a)

RSD 2.656

RSD 1.327,774 komadno (u pakovanju od 2) (s PDV-om)

N-Channel MOSFET, 28 A, 600 V, 3-Pin TO-247 STMicroelectronics STW35N60DM2

Informacije o stanju skladišta trenutno nisu dostupne.

Odaberite vrstu pakovanja

Standard

Kupujte na veliko

količina	Jedinična cena	Po pakovanje
2 - 8	RSD 1.106,478	RSD 2.213
10 - 18	RSD 1.065,981	RSD 2.132
20 - 48	RSD 1.000,663	RSD 2.001
50 - 98	RSD 936,652	RSD 1.873
100+	RSD 924,895	RSD 1.850

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Tehnička dokumentacija

Tehnički podaci

Brand

STMicroelectronics

Channel Type

Maximum Continuous Drain Current

28 A

Maximum Drain Source Voltage

600 V

Series

MDmesh DM2

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

Maximum Drain Source Resistance

110 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

Minimum Gate Threshold Voltage

Maximum Power Dissipation

210 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Number of Elements per Chip

Maximum Operating Temperature

+150 °C

Length

15.75mm

Typical Gate Charge @ Vgs

54 nC @ 10 V

Width

5.15mm

Transistor Material

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.6V

Height

20.15mm

Detalji o proizvodu

N-Channel MDmesh DM2 Series, STMicroelectronics

The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.