Tehnička dokumentacija
Tehnički podaci
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
30 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
13 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
5.8mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.5mm
Typical Gate Charge @ Vgs
7.5 nC @ 4.5 V
Height
2.3mm
Forward Diode Voltage
1V
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 62,705
komadno (u pakovanju od 25) (bez PDV-a)
RSD 75,246
komadno (u pakovanju od 25) (s PDV-om)
25
RSD 62,705
komadno (u pakovanju od 25) (bez PDV-a)
RSD 75,246
komadno (u pakovanju od 25) (s PDV-om)
25
Kupujte na veliko
količina | Jedinična cena | Po pakovanje |
---|---|---|
25 - 50 | RSD 62,705 | RSD 1.568 |
75 - 125 | RSD 54,867 | RSD 1.372 |
150 - 475 | RSD 49,641 | RSD 1.241 |
500+ | RSD 47,029 | RSD 1.176 |
Tehnička dokumentacija
Tehnički podaci
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
30 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
13 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
5.8mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.5mm
Typical Gate Charge @ Vgs
7.5 nC @ 4.5 V
Height
2.3mm
Forward Diode Voltage
1V