Tehnička dokumentacija
Tehnički podaci
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
192 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+150 °C
Length
3mm
Typical Gate Charge @ Vgs
3.99 nC @ 4.5 V
Width
1.4mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Height
1.05mm
Minimum Operating Temperature
-55 °C
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 56,173
komadno (u pakovanju od 50) (bez PDV-a)
RSD 67,408
komadno (u pakovanju od 50) (s PDV-om)
50
RSD 56,173
komadno (u pakovanju od 50) (bez PDV-a)
RSD 67,408
komadno (u pakovanju od 50) (s PDV-om)
50
Kupujte na veliko
količina | Jedinična cena | Po pakovanje |
---|---|---|
50 - 200 | RSD 56,173 | RSD 2.809 |
250+ | RSD 54,867 | RSD 2.743 |
Tehnička dokumentacija
Tehnički podaci
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
192 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+150 °C
Length
3mm
Typical Gate Charge @ Vgs
3.99 nC @ 4.5 V
Width
1.4mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Height
1.05mm
Minimum Operating Temperature
-55 °C