P-Channel MOSFET, 3.1 A, 60 V, 3-Pin SOT-23 Taiwan Semi TSM2309CX RFG

Name: P-Channel MOSFET, 3.1 A, 60 V, 3-Pin SOT-23 Taiwan Semi TSM2309CX RFG
Brand: Taiwan Semiconductor
SKU: 1713616

RS kataloški broj:: 171-3616brend: Taiwan SemiconductorProizvođački broj:: TSM2309CX RFG

Prikaži sve u MOSFETs

Tehnička dokumentacija

Tehnički podaci

Brand

Taiwan Semiconductor

Channel Type

Maximum Continuous Drain Current

3.1 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

Maximum Drain Source Resistance

240 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

1.56 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

1.6mm

Number of Elements per Chip

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

8.2 nC @ 10 V

Length

2.9mm

Height

0.95mm

Forward Diode Voltage

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P.O.A.

P-Channel MOSFET, 3.1 A, 60 V, 3-Pin SOT-23 Taiwan Semi TSM2309CX RFG

3000

P.O.A.

P-Channel MOSFET, 3.1 A, 60 V, 3-Pin SOT-23 Taiwan Semi TSM2309CX RFG

Informacije o stanju skladišta trenutno nisu dostupne.

3000

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Tehnička dokumentacija

Tehnički podaci

Brand

Taiwan Semiconductor

Channel Type

Maximum Continuous Drain Current

3.1 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

Maximum Drain Source Resistance

240 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

1.56 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

1.6mm

Number of Elements per Chip

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

8.2 nC @ 10 V

Length

2.9mm

Height

0.95mm

Forward Diode Voltage