Tehnička dokumentacija
Tehnički podaci
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
30 V
Package Type
VSCONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
14.2 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.5mm
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Number of Elements per Chip
1
Length
3.5mm
Typical Gate Charge @ Vgs
5.3 nC @ 4.5 V
Height
0.9mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Zemlja podrijetla
Philippines
Detalji o proizvodu
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
P.O.A.
250
P.O.A.
250
Tehnička dokumentacija
Tehnički podaci
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
30 V
Package Type
VSCONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
14.2 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.5mm
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Number of Elements per Chip
1
Length
3.5mm
Typical Gate Charge @ Vgs
5.3 nC @ 4.5 V
Height
0.9mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Zemlja podrijetla
Philippines
Detalji o proizvodu