Tehnička dokumentacija
Tehnički podaci
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
204 A
Maximum Drain Source Voltage
40 V
Package Type
VSON-CLIP
Series
NexFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.1mm
Maximum Operating Temperature
+150 °C
Length
6.1mm
Typical Gate Charge @ Vgs
25 nC @ 4.5 V
Number of Elements per Chip
1
Transistor Material
Si
Height
1.05mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 457,222
komadno (u pakovanju od 5) (bez PDV-a)
RSD 548,666
komadno (u pakovanju od 5) (s PDV-om)
5
RSD 457,222
komadno (u pakovanju od 5) (bez PDV-a)
RSD 548,666
komadno (u pakovanju od 5) (s PDV-om)
5
Kupujte na veliko
količina | Jedinična cena | Po pakovanje |
---|---|---|
5 - 20 | RSD 457,222 | RSD 2.286 |
25 - 45 | RSD 437,627 | RSD 2.188 |
50 - 120 | RSD 411,50 | RSD 2.057 |
125 - 245 | RSD 385,373 | RSD 1.927 |
250+ | RSD 378,841 | RSD 1.894 |
Tehnička dokumentacija
Tehnički podaci
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
204 A
Maximum Drain Source Voltage
40 V
Package Type
VSON-CLIP
Series
NexFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.1mm
Maximum Operating Temperature
+150 °C
Length
6.1mm
Typical Gate Charge @ Vgs
25 nC @ 4.5 V
Number of Elements per Chip
1
Transistor Material
Si
Height
1.05mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu